[Info.aoa-nano] SmallTalks [about Nanoscience] "WS2 nanoribbon and all-CVD MoS2-graphene FETs for nanoelectronic devices"

[Nano]

Please join us today, Monday 15 May at 15.00h for our SmallTalks [about Nanoscience]
You are welcome to join us in lecture hall Kollektorn, MC2 with fika or on zoom.

Our speaker is Anamul Md Hoque​, PhD student at Quantum Device Physics, Department of Microtechnology and Nanoscience


The seminar is divided into two parts, where the first part consists of a pure overview of the field and is held on a generally accessible level (10 min). The second part will be more technical (15-20 minutes).
Abstract
It has been 75 years since the invention of the transistor that heralded the modern electronic age. Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) have attracted tremendous interest for high-performance and energy-efficient nanoscale field-effect transistors (FETs). Despite recent advances in down-scaling the gate and channel lengths, the fabrication of sub-25 nm narrow channel of TMDC FETs remained challenging. In my talk, I will demonstrate the fabrication of tungsten disulfide (WS2) nanoribbon down to sub-10 nm width. Nanoribbon FETs exhibit good transistor performance, where the transport parameters are governed by the narrow channel effects. In addition, scalable chemical vapour deposition (CVD)-grown MoS2 and graphene FETs are very promising for future nanodevices, especially for flexible solar cells, memory devices, and neuromorphic computing. I will also show transport properties, memristive switching, and Schottky barrier analysis in CVD-grown MoS2 -graphene heterostructure FET devices. These findings open the door for the fabrication of future-generation nanometer-scale transistors, sensors, and optoelectronic devices based on van der Waals semiconductors.
Looking forward to seeing you live or on Zoom: https://chalmers.zoom.us/j/63018620593#success
Best regards,
Alexandra, Philippe, Christoph, and Janine

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