<html xmlns:v="urn:schemas-microsoft-com:vml" xmlns:o="urn:schemas-microsoft-com:office:office" xmlns:w="urn:schemas-microsoft-com:office:word" xmlns:m="http://schemas.microsoft.com/office/2004/12/omml" xmlns="http://www.w3.org/TR/REC-html40">
<head>
<meta http-equiv="Content-Type" content="text/html; charset=utf-8">
<meta name="Generator" content="Microsoft Word 15 (filtered medium)">
<style><!--
/* Font Definitions */
@font-face
{font-family:"Cambria Math";
panose-1:2 4 5 3 5 4 6 3 2 4;}
@font-face
{font-family:Calibri;
panose-1:2 15 5 2 2 2 4 3 2 4;}
/* Style Definitions */
p.MsoNormal, li.MsoNormal, div.MsoNormal
{margin-top:0cm;
margin-right:0cm;
margin-bottom:8.0pt;
margin-left:0cm;
line-height:105%;
font-size:11.0pt;
font-family:"Calibri",sans-serif;
mso-fareast-language:EN-US;}
h1
{mso-style-priority:9;
mso-style-link:"Rubrik 1 Char";
mso-margin-top-alt:auto;
margin-right:0cm;
mso-margin-bottom-alt:auto;
margin-left:0cm;
font-size:24.0pt;
font-family:"Calibri",sans-serif;}
a:link, span.MsoHyperlink
{mso-style-priority:99;
color:#0563C1;
text-decoration:underline;}
span.Rubrik1Char
{mso-style-name:"Rubrik 1 Char";
mso-style-priority:9;
mso-style-link:"Rubrik 1";
font-family:"Calibri",sans-serif;
mso-fareast-language:SV;
font-weight:bold;}
span.E-postmall19
{mso-style-type:personal-compose;
font-family:"Calibri",sans-serif;
color:windowtext;}
span.apple-converted-space
{mso-style-name:apple-converted-space;}
span.text-normal
{mso-style-name:text-normal;}
.MsoChpDefault
{mso-style-type:export-only;
font-size:10.0pt;
font-family:"Calibri",sans-serif;
mso-fareast-language:EN-US;}
@page WordSection1
{size:612.0pt 792.0pt;
margin:72.0pt 72.0pt 72.0pt 72.0pt;}
div.WordSection1
{page:WordSection1;}
--></style><!--[if gte mso 9]><xml>
<o:shapedefaults v:ext="edit" spidmax="1026" />
</xml><![endif]--><!--[if gte mso 9]><xml>
<o:shapelayout v:ext="edit">
<o:idmap v:ext="edit" data="1" />
</o:shapelayout></xml><![endif]-->
</head>
<body lang="SV" link="#0563C1" vlink="#954F72" style="word-wrap:break-word">
<div class="WordSection1">
<p class="MsoNormal"><b><span lang="EN-US" style="font-size:24.0pt;line-height:105%;color:black">SmallTalk
</span></b><b><span lang="EN-US" style="font-size:14.0pt;line-height:105%;color:black">[about Nanoscience]</span></b><span lang="EN-US" style="color:black"><o:p></o:p></span></p>
<p class="MsoNormal"><b><span lang="EN-US" style="color:black">On Monday </span></b><b><span lang="EN-US">May 15th
</span></b><span lang="EN-US" style="color:black">at 15.00h</span><span lang="EN-US">
<span style="color:black">we welcome you all to our SmallTalk seminar series. You are welcome to join us in lecture hall <b>Kollektorn, MC2 with fika</b> or on zoom.<o:p></o:p></span></span></p>
<h1><span lang="EN-US" style="font-size:11.0pt;color:black;font-weight:normal">Our speaker is Anamul Md Hoque, PhD student at Quantum Device Physics, Department of Microtechnology and Nanoscience. The seminar is titled “WS2 nanoribbon and all-CVD MoS2-graphene
FETs for nanoelectronic devices</span><span class="text-normal"><span lang="EN-US" style="font-size:11.0pt;font-weight:normal"></span></span><span lang="EN-US" style="font-size:11.0pt;color:black;font-weight:normal">”.</span><span lang="EN-US" style="font-size:11.0pt;font-weight:normal"><o:p></o:p></span></h1>
<p class="MsoNormal"><span lang="EN-US" style="color:black">Abstract: <i>It has been 75 years since the invention of the transistor that heralded the modern electronic age. Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) have attracted
tremendous interest for high-performance and energy-efficient nanoscale field-effect transistors (FETs). Despite recent advances in down-scaling the gate and channel lengths, the fabrication of sub-25 nm narrow channel of TMDC FETs remained challenging. In
my talk, I will demonstrate the fabrication of tungsten disulfide (WS2) nanoribbon down to sub-10 nm width. Nanoribbon FETs exhibit good transistor performance, where the transport parameters are governed by the narrow channel effects. In addition, scalable
chemical vapour deposition (CVD)-grown MoS2 and graphene FETs are very promising for future nanodevices, especially for flexible solar cells, memory devices, and neuromorphic computing. I will also show transport properties, memristive switching, and Schottky
barrier analysis in CVD-grown MoS2 -graphene heterostructure FET devices. These findings open the door for the fabrication of future-generation nanometer-scale transistors, sensors, and optoelectronic devices based on van der Waals semiconductors.<o:p></o:p></i></span></p>
<p class="MsoNormal"><span lang="EN-US" style="color:black">The seminar is divided into two parts, where the first part consists of a pure overview of the field and is held on a generally accessible level (10<span class="apple-converted-space"> </span>min).
The second part will be more technical (15-20 minutes).<o:p></o:p></span></p>
<p class="MsoNormal" style="text-align:justify"><span lang="EN-US" style="color:black">Looking forward to seeing you live or on Zoom:
</span><a href="https://chalmers.zoom.us/j/63018620593#success"><span lang="EN-US">https://chalmers.zoom.us/j/63018620593#success</span></a><span style="color:black">
<span lang="EN-US"><o:p></o:p></span></span></p>
<p class="MsoNormal"><span lang="EN-US" style="color:black">Best regards, <o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="color:black">Alexandra, Philippe, Christoph, and Janine<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
</div>
</body>
</html>