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<p class="MsoNormal"><b><span lang="EN-US" style="font-size:24.0pt;line-height:105%;color:black">SmallTalk</span></b><span lang="EN-US" style="color:black">
</span><b><span lang="EN-US" style="font-size:14.0pt;line-height:105%;color:black">[about Nanoscience]</span></b><span lang="EN-US" style="color:black"><o:p></o:p></span></p>
<p class="MsoNormal"><b><span lang="EN-US" style="color:black">On Monday </span></b><b><span lang="EN-US">May 15<sup>th</sup>
</span></b><span lang="EN-US" style="color:black">at 15.00h</span><span lang="EN-US">
<span style="color:black">we welcome you all to our SmallTalk seminar series. You are welcome to join us in lecture hall <b>Kollektorn, MC2 with fika</b> or on zoom.<o:p></o:p></span></span></p>
<h1><span lang="EN-US" style="font-size:11.0pt;color:black;font-weight:normal">Our speaker is
</span><span lang="EN-US" style="font-size:11.0pt;color:black">Anamul Md Hoque​</span><span lang="EN-US" style="font-size:11.0pt;color:black;font-weight:normal">, PhD student at Quantum Device Physics, Department of Microtechnology and Nanoscience.</span><span lang="EN-US" style="font-size:11.0pt;font-weight:normal"><o:p></o:p></span></h1>
<p class="MsoNormal"><i><span lang="EN-US" style="color:black">It has been 75 years since the invention of the transistor that heralded the modern electronic age. Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) have attracted tremendous
interest for high-performance and energy-efficient nanoscale field-effect transistors (FETs). Despite recent advances in down-scaling the gate and channel lengths, the fabrication of sub-25 nm narrow channel of TMDC FETs remained challenging. In my talk, I
will demonstrate the fabrication of tungsten disulfide (WS2) nanoribbon down to sub-10 nm width. Nanoribbon FETs exhibit good transistor performance, where the transport parameters are governed by the narrow channel effects. In addition, scalable chemical
vapour deposition (CVD)-grown MoS2 and graphene FETs are very promising for future nanodevices, especially for flexible solar cells, memory devices, and neuromorphic computing. I will also show transport properties, memristive switching, and Schottky barrier
analysis in CVD-grown MoS2 -graphene heterostructure FET devices. These findings open the door for the fabrication of future-generation nanometer-scale transistors, sensors, and optoelectronic devices based on van der Waals semiconductors.<o:p></o:p></span></i></p>
<p class="MsoNormal"><span lang="EN-US" style="color:black">The seminar is divided into two parts, where the first part consists of a pure overview of the field and is held on a generally accessible level (10<span class="apple-converted-space"> </span>min).
The second part will be more technical (15-20 minutes).<o:p></o:p></span></p>
<p class="MsoNormal" style="text-align:justify"><span lang="EN-US" style="color:black">Looking forward to seeing you live or on Zoom: <a href="https://chalmers.zoom.us/j/63018620593#success">https://chalmers.zoom.us/j/63018620593#success</a><o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="color:black"> <o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="color:black">Best regards, <o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US" style="color:black">Alexandra, Philippe, Christoph, and Janine<o:p></o:p></span></p>
<p class="MsoNormal"><span lang="EN-US"><o:p> </o:p></span></p>
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